Document
SSM3K15AFS
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
SSM3K15AFS
Load Switching Applications
• 2.5 V drive • Low ON-resistance: RDS(ON) = 3.6 Ω (max) (@VGS = 4 V)
RDS(ON) = 6.0 Ω (max) (@VGS = 2.5 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDSS
30
V
Gate-Source voltage
VGSS
± 20
V
Drain current
DC
ID
Pulse
IDP
100 mA
400
Power dissipation
PD
100
mW
Channel temperature Storage temperature range
Tch
150
°C
Tstg
−55 to 150
°C
SSM
1. Gate 2. Source 3. Drain
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEDEC
―
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the
JEITA TOSHIBA
― 2-2H1B
absolute maximum ratings. Please design the appropriate reliability upon reviewing the
Weight: 2.4 mg (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Marking
3
Equivalent Circuit (top view)
3
DI
1
2
1
2
Start of commercial production
2011-01
1
2014-03-01
SSM3K15AFS
Electrical characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max Unit
Drain-Source breakdown voltage
Drain cut-off current Gate leakage current Gate threshold voltage Forward transfer admittance
Drain-Source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Turn-on time Turn-off time
Drain-source forward voltage
V (BR) DSS ID = 0.1 mA, VGS = 0 V
30
V (BR) DSX ID = 0.1 mA, VGS = -10 V (Note 3) 16
IDSS
VDS = 30 V, VGS = 0 V
⎯
IGSS
VGS = ±16 V, VDS = 0 V
⎯
Vth
VDS = 3 V, ID = 0.1 mA
0.8
|Yfs|
VDS = 3 V, ID = 10 mA (Note 2) 35
ID = 10 mA, VGS = 4 V (Note 2) ⎯ RDS (ON)
ID = 10 mA, VGS = 2.5 V (Note 2) ⎯
Ciss
⎯
Coss
VDS = 3 V, VGS = 0 V, f = 1 MHz
⎯
Crss
⎯
ton
VDD = 5 V, ID = 10 mA
⎯
toff
VGS = 0 to 5 V, RG = 50 Ω
⎯
VDSF
ID = -100 mA, VGS = 0 V (Note 2) ⎯
⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 2.3 3.5 13.5 8.0 6.5 5.5 35 -0.85
⎯ V
⎯
1
μA
±1
μA
1.5
V
⎯ mS
3.6 Ω
6.0
⎯
⎯
pF
⎯
⎯ ns
⎯
-1.2
V
Note 2: Pulse test
Note 3: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-source breakdown voltage is lowered in this mode.
Switching Time Test Circuit
(a) Test circuit
5V IN
0
10 μs
RG
OUT
VDD = 5 V RG = 50 Ω Duty ≤ 1%
VIN: tr, tf < 5 ns Common source
Ta = 25°C
VDD
(b) VIN
5V
0V
(c) VOUT VDD
VDS (ON)
10%
90%
90%
10%
tr
tf
ton
toff
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = 0.1 mA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device.
Do not use this device under avalanche mode. It may cause the device to break down.
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.
Thermal resistance Rth (ch-a) and power dissipation PD vary depending on board material, board area, board thickness and pad area. When using this device, please take heat dissipation into consideration
2
2014-03-01
Drain current ID (mA)
400 Common source Ta = 25 °C Pulse test
300
ID – VDS
10 V
200
100
4.0 V
3.0 V 2.7 V 2.5 V 2.3 V
VGS = 2.1 V
0
0
0.2
0.4
0.6
0.8
1.0
Drain-source voltage VDS (V)
Drain current ID (mA)
SSM3K15AFS
1000 100
ID – VGS
10 Ta = 100 °C
1
0.1
0.01 0
− 25 °C
25 °C
Common source VDS = 3 V Pulse test
1.0
2.0
3.0
4.0
Gate-source voltage VGS (V)
Drain-source ON-resistance RDS (ON) (Ω)
RDS (ON) – ID
6
2.1 V 2.3 V 2.5 V 2.7 V
5
3.0 V
4
4.0 V 3
2
VGS = 10 V
1
Common source
Ta = 25°C
Pulse test
0
0
100
200
300
400
Drain current ID (mA)
Drain-source ON-resistance RDS (ON) (Ω)
RDS (ON) – VGS
12 ID = 10 mA
Common source
10
Pulse test
8
6 25 °C
4 Ta = 100 °C
2
− 25 °C
0
0
2
4
6
8
10
Gate-source voltage VGS (V)
RDS (ON) – Ta
6
5 ID = 10 mA / VGS = 2.5 V
4
3
2
10 mA / 4.0 V
1 Common source
Pulse test
0
−50
0
50
100
150
Ambient temperature Ta (°C)
Gate threshold voltage Vth (V)
Vth – Ta
2.0 Common source VDS = 3 V ID = 0.1 mA
1.0
0
−50
0
50
100
150
Ambient temperatu.