DatasheetsPDF.com

SSM3K15AFS Dataheets PDF



Part Number SSM3K15AFS
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Datasheet SSM3K15AFS DatasheetSSM3K15AFS Datasheet (PDF)

SSM3K15AFS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM3K15AFS Load Switching Applications • 2.5 V drive • Low ON-resistance: RDS(ON) = 3.6 Ω (max) (@VGS = 4 V) RDS(ON) = 6.0 Ω (max) (@VGS = 2.5 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDSS 30 V Gate-Source voltage VGSS ± 20 V Drain current DC ID Pulse IDP 100 mA 400 Power dissipation PD 100 mW Channel temperature Storage tempe.

  SSM3K15AFS   SSM3K15AFS


Document
SSM3K15AFS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM3K15AFS Load Switching Applications • 2.5 V drive • Low ON-resistance: RDS(ON) = 3.6 Ω (max) (@VGS = 4 V) RDS(ON) = 6.0 Ω (max) (@VGS = 2.5 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDSS 30 V Gate-Source voltage VGSS ± 20 V Drain current DC ID Pulse IDP 100 mA 400 Power dissipation PD 100 mW Channel temperature Storage temperature range Tch 150 °C Tstg −55 to 150 °C SSM 1. Gate 2. Source 3. Drain Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEDEC ― temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the JEITA TOSHIBA ― 2-2H1B absolute maximum ratings. Please design the appropriate reliability upon reviewing the Weight: 2.4 mg (typ.) Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking 3 Equivalent Circuit (top view) 3 DI 1 2 1 2 Start of commercial production 2011-01 1 2014-03-01 SSM3K15AFS Electrical characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain-Source breakdown voltage Drain cut-off current Gate leakage current Gate threshold voltage Forward transfer admittance Drain-Source ON-resistance Input capacitance Output capacitance Reverse transfer capacitance Switching time Turn-on time Turn-off time Drain-source forward voltage V (BR) DSS ID = 0.1 mA, VGS = 0 V 30 V (BR) DSX ID = 0.1 mA, VGS = -10 V (Note 3) 16 IDSS VDS = 30 V, VGS = 0 V ⎯ IGSS VGS = ±16 V, VDS = 0 V ⎯ Vth VDS = 3 V, ID = 0.1 mA 0.8 |Yfs| VDS = 3 V, ID = 10 mA (Note 2) 35 ID = 10 mA, VGS = 4 V (Note 2) ⎯ RDS (ON) ID = 10 mA, VGS = 2.5 V (Note 2) ⎯ Ciss ⎯ Coss VDS = 3 V, VGS = 0 V, f = 1 MHz ⎯ Crss ⎯ ton VDD = 5 V, ID = 10 mA ⎯ toff VGS = 0 to 5 V, RG = 50 Ω ⎯ VDSF ID = -100 mA, VGS = 0 V (Note 2) ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 2.3 3.5 13.5 8.0 6.5 5.5 35 -0.85 ⎯ V ⎯ 1 μA ±1 μA 1.5 V ⎯ mS 3.6 Ω 6.0 ⎯ ⎯ pF ⎯ ⎯ ns ⎯ -1.2 V Note 2: Pulse test Note 3: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-source breakdown voltage is lowered in this mode. Switching Time Test Circuit (a) Test circuit 5V IN 0 10 μs RG OUT VDD = 5 V RG = 50 Ω Duty ≤ 1% VIN: tr, tf < 5 ns Common source Ta = 25°C VDD (b) VIN 5V 0V (c) VOUT VDD VDS (ON) 10% 90% 90% 10% tr tf ton toff Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = 0.1 mA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device. Do not use this device under avalanche mode. It may cause the device to break down. Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. Thermal resistance Rth (ch-a) and power dissipation PD vary depending on board material, board area, board thickness and pad area. When using this device, please take heat dissipation into consideration 2 2014-03-01 Drain current ID (mA) 400 Common source Ta = 25 °C Pulse test 300 ID – VDS 10 V 200 100 4.0 V 3.0 V 2.7 V 2.5 V 2.3 V VGS = 2.1 V 0 0 0.2 0.4 0.6 0.8 1.0 Drain-source voltage VDS (V) Drain current ID (mA) SSM3K15AFS 1000 100 ID – VGS 10 Ta = 100 °C 1 0.1 0.01 0 − 25 °C 25 °C Common source VDS = 3 V Pulse test 1.0 2.0 3.0 4.0 Gate-source voltage VGS (V) Drain-source ON-resistance RDS (ON) (Ω) RDS (ON) – ID 6 2.1 V 2.3 V 2.5 V 2.7 V 5 3.0 V 4 4.0 V 3 2 VGS = 10 V 1 Common source Ta = 25°C Pulse test 0 0 100 200 300 400 Drain current ID (mA) Drain-source ON-resistance RDS (ON) (Ω) RDS (ON) – VGS 12 ID = 10 mA Common source 10 Pulse test 8 6 25 °C 4 Ta = 100 °C 2 − 25 °C 0 0 2 4 6 8 10 Gate-source voltage VGS (V) RDS (ON) – Ta 6 5 ID = 10 mA / VGS = 2.5 V 4 3 2 10 mA / 4.0 V 1 Common source Pulse test 0 −50 0 50 100 150 Ambient temperature Ta (°C) Gate threshold voltage Vth (V) Vth – Ta 2.0 Common source VDS = 3 V ID = 0.1 mA 1.0 0 −50 0 50 100 150 Ambient temperatu.


SSM3K36FS SSM3K15AFS SSM3K44FS


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)