SSM3K43FS
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
SSM3K43FS
○ High-Speed Switching Applications
• 1...
SSM3K43FS
TOSHIBA Field-Effect
Transistor Silicon N Channel MOS Type
SSM3K43FS
○ High-Speed Switching Applications
1.5-V drive Low ON-resistance : Ron = 1.52 Ω (max) (@VGS = 1.5V)
: Ron = 1.14 Ω (max) (@VGS = 1.8V) : Ron = 0.85 Ω (max) (@VGS = 2.5V) : Ron = 0.66 Ω (max) (@VGS = 4.5V) : Ron = 0.63 Ω (max) (@VGS = 5.0V)
Unit: mm
Absolute Maximum Ratings (Ta = 25 °C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
20
V
Gate-source voltage
VGSS
± 10
V
Drain current
DC
ID
500
mA
Pulse
IDP
1000
Drain power dissipation
PD (Note1)
150
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
―
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-2H1B
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
Weight: 2.4mg (typ.)
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data
(i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, 0.36 mm2 ×3)
Marking
3
NS
1
2
Equivalent Circuit (top view)
3
1
2
Start of commercial production
200...