SSM3K35FS

SSM3K35FS TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K35FS ○ High-Speed Switching Applications ○ Analog Switch Applications 1.2-V drive Low ON-resistance: Ron = 20 Ω (max) (@VGS = 1.2 V) : Ron = 8 Ω (max) (@VGS = 1.5 V) : Ron = 4 Ω (max) (@VGS = 2.5 V) : Ron = 3 Ω (max) (@VGS = 4.0 V) Unit: mm Absolute Maximum Ratings (Ta = 25˚C) Characteristics Symbol Rating Unit Drain–source voltage VDSS 20 V Gate–source voltage VGSS ±10 V Drain current DC ID Pulse IDP 180 mA 360 Drain power dissipation PD 100 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to 150 °C JEDEC - Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEITA - temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum TOSHIBA 2-2H1B Weight: 2.4 mg (typ.) ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current Drain–source breakdown voltage Drain cutoff current Gate threshold voltage Forward...