SSM3K44MFV

SSM3K44MFV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K44MFV High Speed Switching Applications Analog Switch Applications Unit: mm 0.32±0.05 AEC-Q101 qualified (Note 1) Compact package suitable for high-density mounting Low ON-resistance : RDS(ON) = 4.0 Ω (max) (@VGS = 4 V) : RDS(ON) = 7.0 Ω (max) (@VGS = 2.5 V) 0.22±0.05 1.2±0.05 0.8±0.05 1.2±0.05 0.8±0.05 0.4 0.4 Note 1: For detail information, please contact to our sales. Absolute Maximum Ratings (Ta = 25°C) 1 3 2 0.13±0.05 Characteristics Symbol Rating Unit 0.5±0.05 Drain-source voltage VDSS 30 V Gate-source voltage VGSS ±20 V Drain current DC ID Pulse IDP 100 mA 200 Drain power dissipation (Ta = 25°C) PD (Note 1) 150 mW VESM 1. Gate 2. Source 3. Drain Channel temperature Storage temperature Tch 150 °C JEDEC ― Tstg −55 to 150 °C JEITA ― Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 2-1L1B temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 1.5 mg (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated...