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SSM5H08TU

Toshiba Semiconductor

Silicon Epitaxial Schottky Barrier Diode


Description
SSM5H08TU Silicon N Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode SSM5H08TU DC-DC Converter Nch MOSFET and schottky diode combined in one package Low RDS (ON) and low VF Unit: mm Absolute Maximum Ratings (Ta = 25°C) MOSFET Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP (Note 2...



Toshiba Semiconductor

SSM5H08TU

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