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SSM5H06FE

Toshiba Semiconductor
Part Number SSM5H06FE
Manufacturer Toshiba Semiconductor
Description Silicon Epitaxial Schottky Barrier Diode
Published Sep 19, 2014
Detailed Description SSM5H06FE Silicon N Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode SSM5H06FE DC-DC Converter • • Combined ...
Datasheet PDF File SSM5H06FE PDF File

SSM5H06FE
SSM5H06FE

Overview
SSM5H06FE Silicon N Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode SSM5H06FE DC-DC Converter • • Combined Nch MOSFET and Schottky Diode in one Package.
Small package Unit: mm 1.
6±0.
05 1.
2±0.
05 0.
2±0.
05 Absolute Maximum Ratings (Ta = 25°C) MOSFET 1.
6±0.
05 1.
0±0.
05 0.
5 Characteristics Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature DC Pulse Symbol VDS VGSS ID IDP (Note 2) PD (Note 1) Tch Rating 20 ±10 100 200 150 150 Unit V V mA mW °C 1 2 3 5 0.
5 4 0.
12±0.
05 4.
Cathode 5.
Drain ⎯ ⎯ 2-2P1C Absolute Maximum Ratings (Ta = 25°C) SCHOTTKY DIODE Characteristics Maximum (peak) reverse voltage Reverse voltage Average forward current...


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