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SSM5H03TU

Toshiba Semiconductor

Silicon Epitaxial Schottky Barrier Diode


Description
SSM5H03TU Silicon N Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode SSM5H03TU DC-DC Converter Combined Nch MOSFET and Schottky Diode into one Package. Low RDS (ON) and Low VF Unit: mm Absolute Maximum Ratings (Ta = 25°C) MOSFET Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP (No...



Toshiba Semiconductor

SSM5H03TU

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