SSM6L40TU

SSM6L40TU TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L40TU ○ Power Management Switch Applications ○ High-Speed Switching Applications N-ch: 4.0-V drive P-ch: 4.0 -V drive N-ch, P-ch, 2-in-1 Low ON-resistance 2.1±0.1 1.7±0.1 Unit: mm Q1 N-ch: Ron = 182 mΩ (max) (@VGS = 4 V) Ron = 122 mΩ (max) (@VGS = 10 V) Q2 P-ch: Ron = 403 mΩ (max) (@VGS = -4 V) Ron = 226 mΩ (max) (@VGS = -10 V) 0.65 0.65 2 3 5 4 Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP Rating 30 ±20 1.6 3.2 Unit V V A 0.7±0.05 1.Source1 2.Gate1 3.Drain2 4.Source2 5.Gate2 6.Drain1 Q2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP Rating −30 ±20 −1.4 −2.8 Unit V V A UF6 JEDEC JEITA TOSHIBA ― ― 2-2T1B Weight: 7.0 mg (typ.) Absolute Maximum Ratings (Ta = 25 °C) (Q1, Q2 Common) Characteristics Drain power dissipation Channel temperature Storage temperature range Symbol PD(Note 1) Tch Tstg Rating 500 150 −55 to 150 Unit mW °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Tos...