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SSM6L12TU

Part Number	SSM6L12TU
Manufacturer	Toshiba Semiconductor
Description	Silicon Dual-Channel MOSFET
Published	Sep 18, 2014
Detailed Description	SSM6L12TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L12TU High-Speed Switching Applications • O...
Datasheet	SSM6L12TU PDF File

Overview

SSM6L12TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L12TU High-Speed Switching Applications • Optimum for high-density mounting in small packages • Low ON-resistance Q1: RDS(ON) = 180mΩ (max) (@VGS = 2.
5 V) Q2: RDS(ON) = 430mΩ (max) (@VGS = -2.
5 V) Q1 Absolute Maximum Ratings (Ta = 25°C) Unit: mm 2.
1±0.
1 1.
7±0.
1 +0.
1 0.
3-0.
05 Characteristics Symbol Rating Unit Drain-source voltage VDS 30 V Gate-source voltage VGSS ± 12 V Drain current DC ID Pulse IDP 0.
5 A 1.
5 Q2 Absolute Maximum Ratings (Ta = 25°C) 2.
0±0.
1 1.
3±0.
1 0.
65 0.
65 1 6 2 5 3 4 +0.
06 0.
16-0.
05 0.
7±0.
05 Characteristics Symbol Rating Unit Drain-source voltage VDS -20 V Ga...

Similar Datasheet

SSM6L12TU Silicon Dual-Channel MOSFET - Toshiba Semiconductor

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