SSM6P49NU

MOSFETs Silicon P-Channel MOS SSM6P49NU 1. Applications Power Management Switches 2. Features (1) 1.8 V drive (2) Low drain-source on-resistance : RDS(ON) = 157 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 76 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 56 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 45 mΩ (max) (@VGS = -10 V) 3. Packaging and Pin Assignment UDFN6 SSM6P49NU 1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: Drain 1 ©2016-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2010-11 2021-09-17 Rev.2.0 SSM6P49NU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �)(Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS -20 V VGSS ±12 Drain current (DC) (Note 1) ID -4 A Drain current (pulsed) (Note 1), (Note 2) IDP -16 Power dissipation Power dissipation (Note 3) PD (t ≤ 10 s) (Note 3) 1 W 2 Channel temperature Tch 150 � Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods"...