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SSM3K333R

Silicon N-Channel MOSFET

Description

MOSFETs Silicon N-Channel MOS (U-MOS�-H) SSM3K333R 1. Applications Power Management Switches High-Speed Switching 2. Features (1) 4.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 42 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 28 mΩ (max) (@VGS = 10 V) 3. Packaging and Pin Assignment SOT-23F SSM3K333R 1: Gate 2: Source 3: Drain ©2021 1 Toshiba Electro...

Toshiba Semiconductor

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