SSM6K406TU

SSM6K406TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K406TU ○ High-Speed Switching Applications 4.5-V drive Low ON-resistance: Ron = 38.5 mΩ (max) (@VGS = 4.5 V) Ron = 25.0 mΩ (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25˚C) Characteristics Symbol Rating Unit Drain–source voltage VDSS 30 V Gate–source voltage VGSS ±20 V Drain current DC ID Pulse IDP 4.4 A 8.8 Drain power dissipation PD (Note 1) 500 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2) 2.1±0.1 1.7±0.1 Unit: mm +0.1 0.3-0.05 1 6 2 5 3 4 2.0±0.1 1.3±0.1 0.65 0.65 +0.06 0.16-0.05 0.7±0.05 UF6 JEDEC ― JEITA ― TOSHIBA 2-2T1D Weight: 7.0 mg (typ.) Marking 65 4 KNE 12 3 Equivalent Circuit (top view) 6 54 1 2 3 1 Start of commercial pr...