SSM3K131TU

SSM3K131TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ) SSM3K131TU ○ High-Speed Switching Applications 4.5-V drive Low ON-resistance : Ron = 41.5 mΩ (max) (@VGS = 4.5 V) : Ron = 27.6 mΩ (max) (@VGS = 10 V) 2.1±0.1 1.7±0.1 Unit: mm 0.3-+00..015 2.0±0.1 0.65±0.05 0.166±0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage VDSS 30 V Gate-Source voltage VGSS ±20 V Drain current DC ID (Note 1) 6.0 A Pulse IDP (Note 1) 12.0 PD (Note 2) 800 Drain power dissipation PD (Note 3) 500 mW t = 10 s 1000 0.7±0.05 1 2 3 Channel temperature Tch 150 °C 1: Gate Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high UFM 2: Source 3: Drain temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/ voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating JEDEC JEITA TOSHIBA ― ― 2-2U1A Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Weight: 6.6mg (typ.) Note 1: The junction temperature should not exceed 150°C during use. Note 2: Mounted on a ceramic bo...