SSM3K127TU

SSM3K127TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K127TU ○ Power Management Switch Applications ○ High-Speed Switching Applications 1.8V drive Low ON-resistance: Ron = 286 mΩ (max) (@VGS = 1.8V) : Ron = 167 mΩ (max) (@VGS = 2.5V) : Ron = 123 mΩ (max) (@VGS = 4.0V) 2.1±0.1 1.7±0.1 Unit: mm 0.3-+00..015 1 2 3 2.0±0.1 0.65±0.05 Absolute Maximum Ratings (Ta = 25°C) 0.166±0.05 0.7±0.05 Characteristic Symbol Rating Unit Drain-Source voltage VDSS 30 V Gate-Source voltage VGSS ±12 V Drain current DC ID Pulse IDP 2.0 A 4.0 Drain power dissipation PD (Note 1) 800 mW PD (Note 2) 500 Channel temperature Tch 150 °C UFM JEDEC 1. Gate 2. Souce 3. Drain ― Storage temperature range Tstg −55 to 150 °C JEITA ― Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-2U1A temperature/current/voltage and the significant change in Weight: 6.6mg (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a ceramic board. (25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 ...