Document
, Line.
20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
MRF450 MRF450A
The RF Line
SOW -30 MHz
RF POWER TRANSISTORS NPN SILICON RF POWER TRANSISTORS NPN SILICON . . . designed for power amplifier applications in industrial, commercial and amateur radio equ ipment to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics Output Power = 50 Watts Minimum Gain = 1 1 dB Efficiency = 50%
MAXIMUM RATINGS RaiMf^ Colllctor-E miner Voltege Collectorsaxe Voltage Emitter-Ba x voltage Collector Current — Continuous Total Device Oi»ipeJion $ TC - 2S°C Derate above 2S°C Storage Temperature flange Syitfeal Vv^L —L~ ..i,.. )._ i <&& ^==
/^^*~A?2=^
(
\
\s/\s
tHriiON wot
Max '^
Unit °C/W
sm*r
^MSHff i i*s _xi
Oil
••_ Hii -f
i
j -U xJL_j ^^^^""^i L t /•• ', \ Ij
V
! r'u.~1Qr"4 1
1
a
# cz L' lit i^ IK
^t I
'"
«om
u
i
a — u-1! 10 pF.
ARCO 424 CI, C3. C4 - 170- 780 pF. ARCO 4«9 C5, CS — E RIE 0.1 iLf A 100 V RED CAPS ce— 1000 pf UNELCO. 350 V« 35 Vdc . 2.0 vv Carbon LI —0 15 pN Molded Choke MILLER L2 — FERW3XCUBE. VK200 20 4B L3 — 3 Tuf IS. #14 Bare Tinned Wire. 0.3* (0.791 1.D x 0.38" 10.971 Long u. #20 Enamel Wire. Close Wound on R1 L5-FERR 3XCUBE #56-570-IS/3B. 9 Ferrile Beads, on r Long #20 wire InpuVOutput Connectors — Type N Bo*rd-GIa» Teflon Mounted on t V « 4" « 2" 5EEZAK Bo.
X-N^,^^,^-^
oeaisortcwcTOUUKJWrVaMl
W
snui m'Oina ifu^in *o«un»i
Ri-toon
ff % . ~T"tS
-|- "i:.«r-5 -43"i"4j^? ' ™i " ; jj ,, a «•»•
.3 ±E ^SL
MRF460A
.) . '« ' i _ J
Hi?*T«
urn I m
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. \ Semi-Conductors encourages customers to verify that datasheets nre current before placing orders.
MRF450, MRF450A
ELECTRICAL CHARACTERISTICS |TC = 2S°C unte.soinerum nond.1 Ch*ract«ri*tie OFF CHARACTERISTICS Collector Emitter Breakdown Voltage fl c = 100mAdc. IB = 0) Collector-Emitter Breakdown Voltage "C • 20mAdc. VBE =01 Col lector- Bale Breakdown Voltage ilC • 20mAdc. If - 01 Emitter Base Breakdown Volta»e IIE - lOmAdc, lc - 01 ON CHARACTERISTICS DC Current Gain (1C - VOAdc. VCE • 5.0 Vdc) DYNAMIC CHARACTERISTICS Output Caoacitance IV C B - 15 Vd£. IE -O.I- 1.0 MHi) FUNCTIONAL TESTS (Figura 1) Commcn-Emitier Amplifier Powvar Gain IV C C = 13.6 Vdc, POUI- SOW. lclm»xl -6.13Adc.f-30MH:) Collector Efficiency 'V^c = 1 3 6 Vdt. Pout - SOW, lf;(frtax) = 6.13 Adc. f = 30 MHz) Sent! Equivalent Input Intpedance IV CC - 13.6 Vdc. Poul. 50W:f-30MHz) SsriBS Equivalent Output Impedance IV C C- 13.6 Vdc. P 0ul - SOW, f = 30MHz)
GPE
I )
Symbol
I •""
20 40 40 4.0
~
VCBRICEO
V(BPICES
~ ~
Vdc Vdc
~
VIBRICBO V(BRIEBO
"
Vdc vac
~
HFE
10
-
-
-
Cob
-
~
200
— _
r
pf
dS %
11 50 ~ "
15
*
1 56j8ft
~i
2out
"
Ohmt
174-) 50
"
Ohm,
FIGURE Z-INPUT POWER varwi OUTPUT POWER
FIGURE 3 - OUTTUT POWER "araji SUPPLY VOLTAGE
90
<**
. —•
? m
fir,
Q?
^^^
^ ^^ ^
= 3.5 W
f - 30 MMI
0
'5 20 25 3,0 3.5 40 45 50
8.0
SO
10
11
12
13
14
f,n, INPUT POWER IVVATTSl
VCC. SUPPLY VOLTAGt IVOLTS]
.