SSD1030P

P-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 65 @VGS = - 10V -30V -15A 115 @VGS = - 5V 130 @VGS = - 4.5V G S D SSD1030P TO-252 D FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. TO-252 package. Pb free. G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 125 C -Pulsed b o o Symbol VDS VGS ID IDM a Limit -30 + - 25 -15 -30 -1.7 50 -55 to 150 Unit V V A A A W o Drain-Source Diode Forward Current Maximum Power Dissipation a IS PD TJ, TSTG Operating Junction and Storage Temperature Range C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient a R R JC JA 3 50 o C/W South Sea Semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice. South Sea Semiconductor, January 2008 (Rev 2.1) 1 SSD1030P P-Channel Electrical Characteristics (TA = 25 C unless otherwise noted) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate Threshold Voltage o Symbol BVDSS IDSS IGSS VGS(th) Condition VGS=0V, ID=-250 A Min -30 Typ c Max Unit V VDS= -24V, VGS =0V VGS= 25V, VDS=0V -1 -1.9 55 100 110 -30 6 450 110 60 8 7 35 23 9 5 1.5 2.5 -0.8 -1 100 -2.5 65 115 130 m A nA V VDS=VGS ID= -250 A VGS= -10V, ID= -15A Drain-Source On-State Resistance RDS(ON) VGS= -5V , I D = -7...