SSS3401
P-Channel Enhancement Mode MOSFET
Product Summary
VDS (V)
-30V
SOT-23
D
ID (A)
-3A
RDS(ON) (mΩ) Max 75 @VGS = -10V
G
100 @VGS = -4.5V
S
D
FEATURES
Super high dense cell design for low RDS(ON). Rugged and reliable. SOT-23 package.
G S
ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage...
