P-Channel MOSFET
SSS2321
P-Channel Enhancement Mode MOSFET
SOT-23
D
Product Summary
VDS (V) ID (A)
RDS(ON) (mΩ) Max 60 @VGS = -4.5V
G
2...
Description
SSS2321
P-Channel Enhancement Mode MOSFET
SOT-23
D
Product Summary
VDS (V) ID (A)
RDS(ON) (mΩ) Max 60 @VGS = -4.5V
G
21 23
YW
-20V
-3.4A
80 @VGS = -2.5V 125 @VGS = -1.8V
S
D
FEATURES
ȟ!Super high dense cell design for low RDS(ON). ȟ!Rugged and reliable. ȟ!SOT-23 package. ȟ!Pb Free.
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 125 C -Pulsed
b o
o
Symbol
VDS VGS ID IDM
a
Limit
-20 + -8 -3.4 -12 -0.74 0.89 -55 to 150
Unit
V V A A A W
o
Drain-Source Diode Forward Current Maximum Power Dissipation
a
IS PD TJ, TSTG
Operating Junction and Storage Temperature Range
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
a
RįJA
115
o
C/W
South Sea Semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice. South Sea Semiconductor, September 2007 (Rev 2.2)
1
SSS2321
Electrical Characteristics (TA = 25 C unless otherwise noted)
Parameter
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate Threshold Voltage
o
Symbol
BVDSS IDSS IGSS VGS(th)
Condition
VGS=0V, ID=-10ijA VDS=-16V, VGS=0V VGS=Ć8V, VDS=0V VDS=VGS ID=-250ijA VGS=-4.5V, ID=-3.2A
Min
-20
Typ
c
Max
Unit
V
-1 Ć100 -0.4 51 70 115 -6 3 720 175 125 15 35 60 40 8 1.2 2.2 -1.2 25 55 -1.0 60 80 125
ijA nA V
Drain-Source On-State Resistance
RDS(ON)
VGS=-2.5V, ID=-2.0A VGS=-1.8V, ID=-1.0A
mħ
On-State Dr...
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