SSS3402

SSS3402 N-Channel Enhancement Mode MOSFET Product Summary VDS (V) 30V SOT-23 D ID (A) 4.6A RDS(ON) (mΩ) Max 30 @VGS = 10V G 50 @VGS = 4.5V S D FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. SOT-23 package. Pb free. o G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ Ta -Pulsed b Symbol VDS VGS 25 C 70 C o o Limited 30 + - 20 4.6 3.75 16 1.25 1.25 0.8 -55 to 150 Unit V ID IDM A Drain-Source Diode Forward Current Maximum Power Dissipation a a o IS Ta=25 C Ta=70 C o PD TJ, TSTG W o Operating Junction and Storage Temperature Range C THERMAL THERMAL CHARACTERISTICS CHRACTERISTICS Thermal Resistance, Junction-to-Ambient a R JA 100 o C/W South Sea Semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice. South Sea Semiconductor, January 2008 (Rev 2.2) 1 SSS3402 Electrical Characteristics (TA = 25 C unless otherwise noted) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode Forward Voltage o Symbol BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS CISS COSS C...