SSD3055LA

SSD3055LA N-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 65 @VGS = 10V 25V 15A 85 @VGS = 4.5V G S D TO-252 D FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 package. S G ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C -Pulsed b o o Symbol VDS VGS ID IDM a Limit 25 + - 12 15 45 5 50 -55 to 175 Unit V V A A A W o Drain-Source Diode Forward Current a IS o Maximum Power Dissipation @TC = 25 C Operating Junction and Storage Temperature Range PD TJ, TSTG C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient a R R JC 3 o C/W JA 50 South Sea Semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice. South Sea Semiconductor, August 2005 (Rev 2.0) 1 of 7 SSD3055LA Electrical Characteristics (TA = 25 C unless otherwise noted) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate Threshold Voltage Drain-Source On-State Resistance o Symbol BVDSS IDSS IGSS VGS(th) RDS(ON) Condition VGS=0V, ID=250 A Min 25 Typ c Max Unit V VDS=20V, VGS=0V VGS= 12V, VDS=0V A 0.7 1 55 70 16 5 238 96 67 16.5 18 10 23 6 3.1 1.2 0.7 1 1 100 1.7 65 m 85 A nA V VDS=VGS ID=250 VGS=10V, ID=4A VGS=4.5V, ID=3A On-State Drain Current Forward Transconductance Input Capacit...