Power MOSFET
PD - 94297
SMPS MOSFET
Applications Reset Switch for Active Clamp Reset DC-DC converters
IRF6216
HEXFET® Power MOSFET ...
Description
PD - 94297
SMPS MOSFET
Applications Reset Switch for Active Clamp Reset DC-DC converters
IRF6216
HEXFET® Power MOSFET RDS(on) max ID 0.240Ω@VGS =-10V -2.2A
l
VDSS
-150V
Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
l
S
1
8 7
A D D D D
S
S G
2
3
6
4
5
T o p V ie w
SO-8
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
-2.2 -1.9 -19 2.5 0.02 ± 20 7.8 -55 to + 150 300 (1.6mm from case )
Units
A W W/°C V V/ns °C
Thermal Resistance
Symbol
RθJL RθJA
Parameter
Junction-to-Drain Lead Junction-to-Ambient
Typ.
––– –––
Max.
20 50
Units
°C/W
Notes through are on page 8
www.irf.com
1
02/12/02
IRF6216
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. -150 ––– ––– -3.0 ––– ––– ––– ––– Typ...
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