Dual P-Channel MOSFET
Si6993DQ
Vishay Siliconix
Dual P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) - 30 RDS(on) (Ω) 0.031 at VGS = - 1...
Description
Si6993DQ
Vishay Siliconix
Dual P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) - 30 RDS(on) (Ω) 0.031 at VGS = - 10 V 0.048 at VGS = - 4.5 V ID (A) - 4.7 - 3.8
FEATURES
Halogen-free
TrenchFET® Power MOSFETs
RoHS
APPLICATIONS
Load Switch Battery Switch
COMPLIANT
S1
S2
TSSOP-8
D1 S1 S1 G1 1 2 3 4 Top View Ordering Information: Si6993DQ-T1-GE3 (Lead (Pb)-free and Halogen-free) 8 D2 7 S2 6 S2 5 G2
G1
G2
D1 P-Channel MOSFET
D2 P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg - 1.0 1.14 0.73 - 55 to 150 - 4.7 - 3.8 - 30 - 0.70 0.83 0.53 W °C 10 s Steady State - 30 ± 20 - 3.6 - 3.2 A Unit V
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot Notes: a. Surface Mounted on 1" x 1" FR4 board. t ≤ 10 s Steady State Steady State Symbol RthJA RthJF Typical 86 124 52 Maximum 110 150 65 °C/W Unit
Document Number: 72369 S-81221-Rev. B, 02-Jun-08
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Si6993DQ
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State...
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