Si7840DP

Si7840DP New Product Vishay Siliconix N-Channel 30-V (D-S) Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES ID (A) 18 15 rDS(on) (W) 0.0095 @ VGS = 10 V 0.014 @ VGS = 4.5 V D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile APPLICATIONS D DC/DC Converters D Optimized for “High-Side” Synchronous Rectifier Operation PowerPAKt SO-8 D 6.15 mm S 1 2 3 S S 5.15 mm G 4 G D 8 7 6 5 D D D S N-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 30 "20 18 Steady State Unit V 11 8 40 A 1.6 40 80 mJ 1.9 1.2 –55 to 150 W _C ID IDM IS IAS EAS 14 4.1 5.0 PD TJ, Tstg 3.2 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71624 S-05804—Rev. C, 25-Feb-02 www.vishay.com Steady State Steady State RthJA RthJC Symbol Typical 20 52 2.1 Maximum 25 65 2.6 Unit _C/W 1 Si7840DP Vishay Siliconix New Product MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero G...