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C4375 Dataheets PDF



Part Number C4375
Manufacturers SeCoS
Logo SeCoS
Description 2SC4375
Datasheet C4375 DatasheetC4375 Datasheet (PDF)

2SC4375 Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free 1.5 A , 30 V NPN Plastic-Encapsulate Transistor FEATURES   SOT-89 4 1 Small Flat Package. Low Collector-Emitter Saturation Voltage. 2 A E 3 C CLASSIFICATION OF hFE Product-Rank Range Marking 2SC4375-O 100~200 GO 2SC4375-Y 160~320 GY B F G H D K J L PACKAGE INFORMATION REF. Package SOT-89 MPQ 1K LeaderSize 7’ inch A B C D E F Millimeter Min. Max. 4.40 4.60 3.94 4.25 1.40 1.60 2..

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2SC4375 Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free 1.5 A , 30 V NPN Plastic-Encapsulate Transistor FEATURES   SOT-89 4 1 Small Flat Package. Low Collector-Emitter Saturation Voltage. 2 A E 3 C CLASSIFICATION OF hFE Product-Rank Range Marking 2SC4375-O 100~200 GO 2SC4375-Y 160~320 GY B F G H D K J L PACKAGE INFORMATION REF. Package SOT-89 MPQ 1K LeaderSize 7’ inch A B C D E F Millimeter Min. Max. 4.40 4.60 3.94 4.25 1.40 1.60 2.30 2.60 1.50 1.70 0.89 1.20 REF. G H J K L Millimeter Min. Max. 0.40 0.58 1.50 TYP 3.00 TYP 0.32 0.52 0.35 0.44 Collector   Base  Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Continuous Collector Current Collector Power Dissipation Thermal Resistance Junction to Ambient Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC RθJA TJ, TSTG Rating 30 30 5 1.5 500 250 150, -55~150 Unit V V V A mW °C / W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to emitter Voltage Transition Frequency Collector Output Capacitance http://www.SeCoSGmbH.com/ Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE fT Cob Min 30 30 5 100 - Typ 120 - Max 0.1 0.1 320 2 1 40 Unit V V V μA μA V V MHz pF Test condition IC=1mA, IE=0 IC=10mA, IB=0 IE=1mA, IC=0 VCB=30 V, IE=0 VEB=5V, IC=0 VCE=2V, IC=500mA IC=1.5A, IB=30mA VCE=2V, IC=500mA VCE=2V, IC=500mA VCB =10V, IE=0 , f=1MHz Any changes of specification will not be informed individually. 14-Jan-2010 Rev. A Page 1 of 1 .


Si7388DP C4375 2SC4375


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