Si7388DP

Si7388DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.007 at VGS = 10 V 0.010 at VGS = 4.5 V ID (A) 19 15 FEATURES Halogen-free available TrenchFET® Power MOSFET New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile 100 % Rg Tested RoHS COMPLIANT PowerPAK SO-8 APPLICATIONS DC/DC Synchronous Rectifier 6.15 mm S 1 2 3 S S 5.15 mm G 4 D D 8 7 6 5 D D D G Bottom View Ordering Information: Si7388DP-T1-E3 (Lead (Pb)-free) Si7388DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 s Steady State 30 ± 20 12 9 ± 50 1.6 1.9 1.2 - 55 to 150 260 Unit V 19 15 4.1 5 3.2 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (MOSFET)a Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Steady State Symbol RthJA RthJC Typical 20 55 2.0 Maximum 25 65 2.6 Unit °C/W Notes: a. Surface Mounted on 1” x 1” FR4 board. b. See Solder Profile ( http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exp...