Si7384DP

Si7384DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.0085 at VGS = 10 V 0.0125 at VGS = 4.5 V ID (A) 18 14 FEATURES Halogen-free available TrenchFET® Gen II Power MOSFET PWM Optimized for High Efficiency New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile 100 % Rg Tested RoHS COMPLIANT PowerPAK SO-8 APPLICATIONS High-Side DC/DC Conversion - Notebook - Desktop - Server D 6.15 mm S 1 2 3 S S 5.15 mm G 4 D 8 7 6 5 D D D G Bottom View Ordering Information: Si7384DP-T1-E3 (Lead (Pb)-free) Si7384DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 10 s Steady State 30 ± 20 11 8 ± 50 1.5 25 32 1.8 1.1 - 55 to 150 260 Unit V 18 14 4.1 A L = 0.1 mH TA = 25 °C TA = 70 °C mJ W °C 5 3.2 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (MOSFET)a Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Steady State Symbol RthJA RthJC Typical 21 56 2.4 Maximum 25 70 3.0 Unit °C/W Notes: a. Surface Mounted on 1”...