Document
Si4852DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.0120 @ VGS = 10 V 0.0175 @ VGS = 4.5 V
ID (A)
11 9.5
FEATURES
D LITTLE FOOTr Plus D 100% Rg Tested
SCHOTTKY PRODUCT SUMMARY
VDS (V)
30
VSD (v) Diode Forward Voltage
0.53 V @ 3 A
IF (A)
4
SO-8
S S S G 1 2 3 4 Top View Ordering Information: Si4852DY Si4852DY-T1 (with Tape and Reel) 8 7 6 5 D D D D G
D
Schottky Diode
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage Continuous Drain Current (TJ = 150_C) (MOSFET)a Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a Average Foward Current (Schottky) Pulsed Foward Current (Schottky) Maximum Power Dissipation (MOSFET)a Maximum Power Dissipation (Schottky)a TA = 25_C TA = 70_C TA = 25_C TA = 70_C TJ, Tstg PD TA = 25_C TA = 70_C
Symbol
VDS VDA VGS ID IDM IS IF IFM
10 secs
30 30 "20 11 9.0 50 2.3 4.0 50 2.5 1.6 2.27 1.45 - 55 to 150
Steady State
Unit
V
8.7 7.0 1.3 2.5 1.47 0.94 1.38 0.88 _C W A
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
MOSFET Parameter
M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71307 S-31726—Rev. D, 18-Aug-03 www.vishay.com t v 10 sec Steady-State Steady-State
Schottky Typ
45 75 20
Symbol
RthJA RthJF
Typ
40 72 18
Max
50 85 22
Max
55 90 25
Unit
_C/W
1
Si4852DY
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED).
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage g Drain Current On-State Drain Currentb Drain Source On-State Drain-Source On State Resistanceb Forward Transconductanceb Schottky Diode Forward Voltageb VGS(th) IGSS IDSS ID(on) rDS(on) DS( ) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 100_C VDS = 24 V, VGS = 0 V, TJ = 125_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 11 A VGS = 4.5 V, ID = 9.5 A VDS = 15 V, ID = 11 A IS = 3.0 A, VGS = 0 V IS = 3.0 A, VGS = 0 V, TJ = 125_C 20 0.0100 0.0145 28 0.485 0.416 0.53 0.47 0.0120 0.0175 0.007 1.5 6.5 1 "100 0.100 10 20 A W S V mA V nA
Symbol
Test Condition
Min
Typa
Max
Unit
Dynamica
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 3.o A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W 0.5 17 10 60 18 40 VDS = 15 V, , VGS = 5 V, , ID = 11 A 24 9 7.5 2.6 30 20 100 30 70 ns W 35 nC
Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Forward Voltage Drop
Symbol
VF
Test Condition
IF = 3.0 A IF = 3.0 A, TJ = 125_C Vr = 24 V Vr = 24 V, TJ = 100_C Vr = - 24 V, TJ = 125_C Vr = 10 V
Min
Typ
0.485 0.416 0.007 1.5 6.4 115
Max
0.53 0.47 0.100 10 20
Unit
V
Maximum Reverse Leakage g Current Junction Capacitance
Irm CT
mA pF
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Document Number: 71307 S-31726—Rev. D, 18-Aug-03
Si4852DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
VGS = 10 thru 4 V 32 I D - Drain Current (A) I D - Drain Current (A) 40
40
50
Transfer Characteristics
24
30 TC = 125_C
16
20
8 2V 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) 3V
10
25_C - 55_C
0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGS - Gate-to-Source Voltage (V)
0.020
On-Resistance vs. Drain Current
4200 3500 C - Capacitance (pF) 2800 2100 1400 Coss 700 0
Capacitance
r DS(on) - On-Resistance ( W )
0.016
VGS = 4.5 V
Ciss
0.012
VGS = 10 V
0.008
0.004
Crss
0.000 0 8 16 24 32 40 ID - Drain Current (A)
0
6
12
18
24
30
VDS - Drain-to-Source Voltage (V)
10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 9.8 A
Gate Charge
1.8 1.6 1.4 1.2 1.0 0.8 0.6 - 50
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 9.8 A
6
4
2
0 0 9 18 27 36 45 Qg - Total Gate Charge (nC)
r DS(on) - On-Resistance (W ) (Normalized)
8
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (_C)
Document Number: 71307 S-31726—Rev. D, 18-Aug-03
www.vishay.com
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Si4852DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
100 0.05
On-Resistance vs. Gate-to-Source Voltage
I S - Source Current (A)
TJ = 150_C 10
DS(on) - On-Resistance ( W )
0.04
0.03
TJ = 25_C 1
0.02 ID = 9.8 A 0.01
r
0.1 0.0
0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Reverse Current (Schottky)
30 10 80 I R - Reverse Curent (mA) 1 Power (W) 60 100
Single Pulse Power, Junction-to-Ambient
0.1 0.01
30 V 10 V
40
0.001
20 V
20
0.0001
0
25
50
75
100
125
15.