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Si4852DY Dataheets PDF



Part Number Si4852DY
Manufacturers Vishay
Logo Vishay
Description N-Channel 30-V (D-S) MOSFET
Datasheet Si4852DY DatasheetSi4852DY Datasheet (PDF)

Si4852DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.0120 @ VGS = 10 V 0.0175 @ VGS = 4.5 V ID (A) 11 9.5 FEATURES D LITTLE FOOTr Plus D 100% Rg Tested SCHOTTKY PRODUCT SUMMARY VDS (V) 30 VSD (v) Diode Forward Voltage 0.53 V @ 3 A IF (A) 4 SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4852DY Si4852DY-T1 (with Tape and Reel) 8 7 6 5 D D D D G D Schottky Diode S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UN.

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Si4852DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.0120 @ VGS = 10 V 0.0175 @ VGS = 4.5 V ID (A) 11 9.5 FEATURES D LITTLE FOOTr Plus D 100% Rg Tested SCHOTTKY PRODUCT SUMMARY VDS (V) 30 VSD (v) Diode Forward Voltage 0.53 V @ 3 A IF (A) 4 SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4852DY Si4852DY-T1 (with Tape and Reel) 8 7 6 5 D D D D G D Schottky Diode S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage Continuous Drain Current (TJ = 150_C) (MOSFET)a Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a Average Foward Current (Schottky) Pulsed Foward Current (Schottky) Maximum Power Dissipation (MOSFET)a Maximum Power Dissipation (Schottky)a TA = 25_C TA = 70_C TA = 25_C TA = 70_C TJ, Tstg PD TA = 25_C TA = 70_C Symbol VDS VDA VGS ID IDM IS IF IFM 10 secs 30 30 "20 11 9.0 50 2.3 4.0 50 2.5 1.6 2.27 1.45 - 55 to 150 Steady State Unit V 8.7 7.0 1.3 2.5 1.47 0.94 1.38 0.88 _C W A Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS MOSFET Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71307 S-31726—Rev. D, 18-Aug-03 www.vishay.com t v 10 sec Steady-State Steady-State Schottky Typ 45 75 20 Symbol RthJA RthJF Typ 40 72 18 Max 50 85 22 Max 55 90 25 Unit _C/W 1 Si4852DY Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED). Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage g Drain Current On-State Drain Currentb Drain Source On-State Drain-Source On State Resistanceb Forward Transconductanceb Schottky Diode Forward Voltageb VGS(th) IGSS IDSS ID(on) rDS(on) DS( ) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 100_C VDS = 24 V, VGS = 0 V, TJ = 125_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 11 A VGS = 4.5 V, ID = 9.5 A VDS = 15 V, ID = 11 A IS = 3.0 A, VGS = 0 V IS = 3.0 A, VGS = 0 V, TJ = 125_C 20 0.0100 0.0145 28 0.485 0.416 0.53 0.47 0.0120 0.0175 0.007 1.5 6.5 1 "100 0.100 10 20 A W S V mA V nA Symbol Test Condition Min Typa Max Unit Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 3.o A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W 0.5 17 10 60 18 40 VDS = 15 V, , VGS = 5 V, , ID = 11 A 24 9 7.5 2.6 30 20 100 30 70 ns W 35 nC Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Forward Voltage Drop Symbol VF Test Condition IF = 3.0 A IF = 3.0 A, TJ = 125_C Vr = 24 V Vr = 24 V, TJ = 100_C Vr = - 24 V, TJ = 125_C Vr = 10 V Min Typ 0.485 0.416 0.007 1.5 6.4 115 Max 0.53 0.47 0.100 10 20 Unit V Maximum Reverse Leakage g Current Junction Capacitance Irm CT mA pF www.vishay.com 2 Document Number: 71307 S-31726—Rev. D, 18-Aug-03 Si4852DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics VGS = 10 thru 4 V 32 I D - Drain Current (A) I D - Drain Current (A) 40 40 50 Transfer Characteristics 24 30 TC = 125_C 16 20 8 2V 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) 3V 10 25_C - 55_C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS - Gate-to-Source Voltage (V) 0.020 On-Resistance vs. Drain Current 4200 3500 C - Capacitance (pF) 2800 2100 1400 Coss 700 0 Capacitance r DS(on) - On-Resistance ( W ) 0.016 VGS = 4.5 V Ciss 0.012 VGS = 10 V 0.008 0.004 Crss 0.000 0 8 16 24 32 40 ID - Drain Current (A) 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 9.8 A Gate Charge 1.8 1.6 1.4 1.2 1.0 0.8 0.6 - 50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 9.8 A 6 4 2 0 0 9 18 27 36 45 Qg - Total Gate Charge (nC) r DS(on) - On-Resistance (W ) (Normalized) 8 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Document Number: 71307 S-31726—Rev. D, 18-Aug-03 www.vishay.com 3 Si4852DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 100 0.05 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) TJ = 150_C 10 DS(on) - On-Resistance ( W ) 0.04 0.03 TJ = 25_C 1 0.02 ID = 9.8 A 0.01 r 0.1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Reverse Current (Schottky) 30 10 80 I R - Reverse Curent (mA) 1 Power (W) 60 100 Single Pulse Power, Junction-to-Ambient 0.1 0.01 30 V 10 V 40 0.001 20 V 20 0.0001 0 25 50 75 100 125 15.


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