Si4800BDY

Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.0185 at VGS = 10 V 0.030 at VGS = 4.5 V ID (A) 9 7 FEATURES Halogen-free According to IEC 61249-2-21 Available TrenchFET® Power MOSFET High-Efficient PWM Optimized 100 % UIS and Rg Tested SO-8 S S S G 1 2 3 4 Top View S Ordering Information: Si4800BDY-T1-E3 (Lead (Pb)-free) Si4800BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET 8 7 6 5 D D D D G D ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a, b Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction)a, b Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range L = 0.1 mH TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 2.5 1.6 - 55 to 150 2.3 15 11.25 1.3 0.8 mJ W °C 9 7.0 40 10 s 30 ± 25 6.5 5.0 A Steady State Unit V THERMAL RESISTANCE RATINGS Limits Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on FR4 board. b. t ≤ 10 s. t ≤ 10 s Steady State Steady State Symbol RthJA RthJF Typ. 40 70 24 Max. 50 95 30 °C/W Unit Document Number: 72124 S-83039-Rev. H, 29-Dec-08 www.vishay.com 1 Si4800BDY Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Gate Threshold Vo...