Si4427BDY

Si4427BDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) 0.0105 at VGS = - 10 V 0.0125 at VGS = - 4.5 V 0.0195 at VGS = - 2.5 V ID (A) - 12.6 - 11.5 - 9.2 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFETs Compliant to RoHS Directive 2002/95/EC SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4427BDY-T1-E3 (Lead (Pb)-free) Si4427BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) D P-Channel MOSFET 8 7 6 5 D D D D G S ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg - 2.5 2.5 1.6 - 55 to 150 - 12.6 - 10.1 - 50 - 1.3 1.5 0.9 W °C 10 s Steady State - 30 ± 12 - 9.7 - 7.7 A Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. t ≤ 10 s Steady State Steady State Symbol RthJA RthJF Typical 40 70 15 Maximum 50 85 18 °C/W Unit Document Number: 72295 S09-0764-Rev. D, 04-May-09 www.vishay.com 1 Si4427BDY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta ...