Document
FDW2516NZ
March 2003
FDW2516NZ
Common Drain N-Channel 2.5V specified PowerTrench® MOSFET
General Description
This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS(ON) @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains on one side of the package.
Features
• 5.8 A, 20 V RDS(ON) = 30 mΩ @ VGS = 4.5 V RDS(ON) = 40 mΩ @ VGS = 2.5 V
• Isolated source and drain pins • ESD protection diode (note 3) • High performance trench technology for extremely low RDS(ON) @ VGS = 2.5 V • Low profile TSSOP-8 package
Applications
• Li-Ion Battery Pack
D D D D G2 S2 G1 S1
Pin 1
1 2 3 4
8 7 6 5
TSSOP-8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
20 ±12
(Note 1a)
Units
V V A W °C
5.8 20 1.6 1.1 –55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient
(Note 1a) (Note 1b)
77 114
°C/W °C/W
Package Marking and Ordering Information
Device Marking 2516NZ Device FDW2516NZ Reel Size 13’’ Tape width 12mm Quantity 3000 units
©2003 Fairchild Semiconductor Corporation
FDW2516NZ Rev B
FDW2516NZ
Electrical Characteristics
Symbol
BVDSS ∆BVDSS ∆TJ IDSS IGSS
TA = 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 µA
Min
20
Typ
Max Units
V
Off Characteristics
ID = 250 µA, Referenced to 25°C VDS = 16 V, VGS = ±12 V, VGS = 0 V VDS = 0 V 10 1 ±10 mV/°C µA µA
On Characteristics
VGS(th) ∆VGS(th) ∆TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance
VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 4.5 V, ID = 5.8 A VGS = 2.5 V, ID = 5.0 A VGS = 4.5 V, ID = 5.8 A, TJ=125°C VGS = 4.5 V, VDS = 5 V, VDS = 5 V ID = 5.8 A
0.6
1.0 –0.3 25 32 33
1.5
V mV/°C
30 40 43
mΩ
ID(on) gFS
10 25
A S
Dynamic Characteristics
Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)
VDS = 10 V, f = 1.0 MHz VGS = 15 mV,
V GS = 0 V,
745 205 115
pF pF pF Ω
f = 1.0 MHz
1.6
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge
VDD = 10 V, VGS = 4.5 V,
ID = 1 A, RGEN = 6 Ω
9 6 15 8
17 11 28 16 12
ns ns ns ns nC nC nC
VDS = 10 V, VGS = 5 V
ID = 5.8 A,
9 1.5 2.4
FDW2516NZ Rev B
FDW2516NZ
Electrical Characteristics
Symbol
IS VSD trr Qrr
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Un.