DatasheetsPDF.com

FDW2516NZ Dataheets PDF



Part Number FDW2516NZ
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDW2516NZ DatasheetFDW2516NZ Datasheet (PDF)

FDW2516NZ March 2003 FDW2516NZ Common Drain N-Channel 2.5V specified PowerTrench® MOSFET General Description This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS(ON) @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains on one side of the package. Features • 5.8 A, 20 V RDS(ON) = 30 mΩ @ VGS = 4.5 V RDS(ON) = 40 mΩ @ VGS = 2.5 V • Isolated source and drain pins • ESD protection diode (note 3) • High performance.

  FDW2516NZ   FDW2516NZ



Document
FDW2516NZ March 2003 FDW2516NZ Common Drain N-Channel 2.5V specified PowerTrench® MOSFET General Description This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS(ON) @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains on one side of the package. Features • 5.8 A, 20 V RDS(ON) = 30 mΩ @ VGS = 4.5 V RDS(ON) = 40 mΩ @ VGS = 2.5 V • Isolated source and drain pins • ESD protection diode (note 3) • High performance trench technology for extremely low RDS(ON) @ VGS = 2.5 V • Low profile TSSOP-8 package Applications • Li-Ion Battery Pack D D D D G2 S2 G1 S1 Pin 1 1 2 3 4 8 7 6 5 TSSOP-8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings 20 ±12 (Note 1a) Units V V A W °C 5.8 20 1.6 1.1 –55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 77 114 °C/W °C/W Package Marking and Ordering Information Device Marking 2516NZ Device FDW2516NZ Reel Size 13’’ Tape width 12mm Quantity 3000 units ©2003 Fairchild Semiconductor Corporation FDW2516NZ Rev B FDW2516NZ Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSS TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage (Note 2) Test Conditions VGS = 0 V, ID = 250 µA Min 20 Typ Max Units V Off Characteristics ID = 250 µA, Referenced to 25°C VDS = 16 V, VGS = ±12 V, VGS = 0 V VDS = 0 V 10 1 ±10 mV/°C µA µA On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 4.5 V, ID = 5.8 A VGS = 2.5 V, ID = 5.0 A VGS = 4.5 V, ID = 5.8 A, TJ=125°C VGS = 4.5 V, VDS = 5 V, VDS = 5 V ID = 5.8 A 0.6 1.0 –0.3 25 32 33 1.5 V mV/°C 30 40 43 mΩ ID(on) gFS 10 25 A S Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) VDS = 10 V, f = 1.0 MHz VGS = 15 mV, V GS = 0 V, 745 205 115 pF pF pF Ω f = 1.0 MHz 1.6 Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDD = 10 V, VGS = 4.5 V, ID = 1 A, RGEN = 6 Ω 9 6 15 8 17 11 28 16 12 ns ns ns ns nC nC nC VDS = 10 V, VGS = 5 V ID = 5.8 A, 9 1.5 2.4 FDW2516NZ Rev B FDW2516NZ Electrical Characteristics Symbol IS VSD trr Qrr TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Un.


FDW2512NZ FDW2516NZ LTI550HN08-V


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)