FDN372S
September 2002
FDN372S
30V N-Channel PowerTrench SyncFET™
General Description
The FDN372S is designed to repl...
FDN372S
September 2002
FDN372S
30V N-Channel PowerTrench SyncFET™
General Description
The FDN372S is designed to replace a single MOSFET and
Schottky diode, used in synchronous DC-DC power supplies, with a single integrated component. This 30V MOSFET is designed to maximize power conversion efficiency with low Rds(on) and low gate charge. The FDN372S includes an integrated
Schottky diode using Fairchild Semiconductor’s monolithic SyncFET process, making it ideal as the low side switch in a synchronous converter.
Features
2.6 A, 30 V. RDS(ON) = 40 mΩ @ VGS = 10 V RDS(ON) = 50 mΩ @ VGS = 4.5 V
Low gate charge Fast switching speed High performance trench technology for extremely low RDS(ON)
Applications
DC-DC Converter Motor Drives
D
D
S
G S
SuperSOT -3
TM
G
TA=25oC unless otherwise noted
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
Parameter
Ratings
30 ± 16
(Note 1a)
Units
V V A W °C
2.6 10 0.5 0.46 –55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
250 75
°C/W °C/W
Package Marking and Ordering Information
Device Marking 372 Device FDN372S Reel Size 7’’ Tape width 8mm Quantity 3000 units
2002 Fairchild Semiconductor Corporation
FDN372S Rev C(W)
FDN372S
El...