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FDN372S

Fairchild Semiconductor

N-Channel MOSFET

FDN372S September 2002 FDN372S 30V N-Channel PowerTrench SyncFET™ General Description The FDN372S is designed to repl...


Fairchild Semiconductor

FDN372S

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Description
FDN372S September 2002 FDN372S 30V N-Channel PowerTrench SyncFET™ General Description The FDN372S is designed to replace a single MOSFET and Schottky diode, used in synchronous DC-DC power supplies, with a single integrated component. This 30V MOSFET is designed to maximize power conversion efficiency with low Rds(on) and low gate charge. The FDN372S includes an integrated Schottky diode using Fairchild Semiconductor’s monolithic SyncFET process, making it ideal as the low side switch in a synchronous converter. Features 2.6 A, 30 V. RDS(ON) = 40 mΩ @ VGS = 10 V RDS(ON) = 50 mΩ @ VGS = 4.5 V Low gate charge Fast switching speed High performance trench technology for extremely low RDS(ON) Applications DC-DC Converter Motor Drives D D S G S SuperSOT -3 TM G TA=25oC unless otherwise noted Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Parameter Ratings 30 ± 16 (Note 1a) Units V V A W °C 2.6 10 0.5 0.46 –55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 250 75 °C/W °C/W Package Marking and Ordering Information Device Marking 372 Device FDN372S Reel Size 7’’ Tape width 8mm Quantity 3000 units 2002 Fairchild Semiconductor Corporation FDN372S Rev C(W) FDN372S El...




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