CEM8206

CEM8206 Feb. 2003 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V , 6A , RDS(ON)=20m Ω @VGS=4.5V. RDS(ON)=30m Ω @VGS=2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface Mount Package. 1 2 3 4 5 D1 8 D1 7 D2 6 D2 5 SO-8 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous a -Pulsed Drain-Source Diode Forward Current a Maximum Power Dissipation a Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 20 Unit V V A A A W C Ć12 Ć6 Ć24 6 2 -55 to 150 THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a RįJA 62.5 C/W 5-73 CEM8206 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter 5 Symbol BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS c Condition VGS = 0V, ID = 250µA VDS = 20V, VGS = 0V VGS =Ć12V, VDS = 0V VDS = VGS, ID = 250µA VGS = 4.5V, ID = 6.0A VGS = 2.5V, ID = 5.2A VDS = 5V, VGS = 4.5V VDS =10V, ID = 6.0A Min Typ C Max Unit 20 1 Ć100 0.5 17 23 10 7 16 950 450 135 1.5 20 30 V µA nA V mΩ mΩ A S PF PF PF OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS b Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS C...