Document
CEM4800A
N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 9.0A, RDS(ON) = 13.5mΩ (typ) @VGS = 10V. RDS(ON) = 20mΩ (typ) @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
D 8 D 7 D 6 D 5
5
SO-8 1
1 S
2 S
3 S
4 G
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 30 Units V V A A W C
±20
9 40 2.5 -55 to 150
Maximum Power Dissipation Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 50 Units C/W
2004.October 5 - 99
http://www.cetsemi.com
CEM4800A
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Forwand Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-On Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 2.3A VDS = 15V, ID = 9A, VGS = 5V VDD = 15V, ID = 1A, VGS = 10V, RGEN = 6Ω 13 2.6 41.2 5.1 13.7 3.7 4.2 2.3 1.2 20 5 60 9 18 ns ns ns ns nC nC nC A V
d
TA = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Test Condition VGS = 0V, ID = 250µA VDS = 24V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 9A VGS = 4.5V, ID = 7A VDS = 15V, ID = 9A 1 13.5 20 10 1489 284 118 Min 30 1 100 -100 3 17 28 Typ Max Units V
µA
nA nA V mΩ mΩ S pF pF pF
VDS = 15V, VGS = 0V, f = 1.0 MHz
Drain-Source Diode Characteristics and Maximun Ratings
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.
5 - 100
CEM4800A
25 VGS=10,8,6,5V VGS=4V 50
ID, Drain Current (A)
15
ID, Drain Current (A)
20
40
30
5
25 C -55 C
10
20
VGS=3V
5
10
TJ=125 C
0 0 1 2 3 4
0 1 2 3 4
VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics
2400 2000 1600 1200 800 400 0 0 5 10 15 20 25 Coss Crss Ciss 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100
VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
ID=9A VGS=10V
C, Capacitance (pF)
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature
VGS=0V
1
VTH, Normalized Gate-Source Threshold Voltage
VDS=VGS ID=250µA
IS, Source-drain current (A)
25 50 75 100 125 150
10
10
0
10 -25 0
-1
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature
VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current
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CEM4800A
VGS, Gate to Source Voltage (V)
10 V =15V DS ID=9A 10
2
ID, Drain Current (A)
8
RDS(ON)Limit 10
1
6
1ms 10ms 100ms 1s DC
10
0
4
2
10
-1
0 0 4 8 12 16
10
-2
TA=25 C TJ=150 C Single Pulse 10
-2
10
-1
10
0
10
1
10
2
Qg, Total Gate Charge (nC) Figure 7. Gate Charge
VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area
VDD t on V IN D VGS RGEN G
90%
toff tr
90%
RL VOUT
td(on) VOUT
td(off)
90% 10%
tf
10%
INVERTED
S
VIN
50% 10%
50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
10
0
r(t),Normalized Effective Transient Thermal Impedance
D=0.5 0.2
10
-1
0.1 0.05 0.02 0.01 PDM t1 t2 1. R£cJA (t)=r (t) * R£cJA 2. R£cJA=See Datasheet 3. TJM-TA = P* R£cJA (t) 4. Duty Cycle, D=t1/t2
10
-2
Single Pulse
-3
10
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve
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.