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APTGT150DU170G

Microsemi

IGBT

APTGT150DU170G Dual common source Trench + Field Stop IGBT® Power Module C1 Q1 G1 C2 Q2 G2 VCES = 1700V IC = 150A @ Tc ...


Microsemi

APTGT150DU170G

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Description
APTGT150DU170G Dual common source Trench + Field Stop IGBT® Power Module C1 Q1 G1 C2 Q2 G2 VCES = 1700V IC = 150A @ Tc = 80°C Application AC Switches Switched Mode Power Supplies Uninterruptible Power Supplies Features Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile RoHS Compliant E1 E2 E G1 E1 C1 E C2 E2 G2 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Reverse Bias Safe Operating Area 300A @ 1600V These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT150DU170G – Rev 1 July, 2006 Max ratings 1700 250 150 300 ±20 890 Unit V A V W APTGT150DU170G All ratings @ Tj = 25°C unless otherwise specified Electrical Ch...




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