IGBT
APTGT150DU170G
Dual common source Trench + Field Stop IGBT® Power Module
C1 Q1 G1 C2 Q2 G2
VCES = 1700V IC = 150A @ Tc ...
Description
APTGT150DU170G
Dual common source Trench + Field Stop IGBT® Power Module
C1 Q1 G1 C2 Q2 G2
VCES = 1700V IC = 150A @ Tc = 80°C
Application AC Switches Switched Mode Power Supplies Uninterruptible Power Supplies Features Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile RoHS Compliant
E1
E2
E
G1 E1
C1
E
C2
E2 G2
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C
Reverse Bias Safe Operating Area
300A @ 1600V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
www.microsemi.com
1-5
APTGT150DU170G – Rev 1
July, 2006
Max ratings 1700 250 150 300 ±20 890
Unit V A V W
APTGT150DU170G
All ratings @ Tj = 25°C unless otherwise specified Electrical Ch...
Similar Datasheet
- APTGT150DU170 IGBT - Advanced Power Technology
- APTGT150DU170G IGBT - Microsemi