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APTGT150A120D1G

Microsemi

IGBT

APTGT150A120D1G Phase leg Trench + Field Stop IGBT Power Module Q1 4 5 Q2 6 7 3 VCES = 1200V IC = 150A @ Tc = 80°C Appl...


Microsemi

APTGT150A120D1G

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Description
APTGT150A120D1G Phase leg Trench + Field Stop IGBT Power Module Q1 4 5 Q2 6 7 3 VCES = 1200V IC = 150A @ Tc = 80°C Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated Kelvin emitter for easy drive High level of integration M5 power connectors Benefits Outstanding performance at high frequency operation Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat RoHS Compliant 1 2 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Max ratings 1200 220 150 300 ±20 690 300A @ 1100V Unit V A December, 2009 1-4 APTGT150A120D1G – Rev 1 V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGT150A120D1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE...




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