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TK8A60DA
Transistor
Description
TK8A60DA TOSHIBA Field Effect
Transistor
Silicon N Channel MOS Type (π-MOSⅦ) TK8A60DA Switching
Regulator
Applications Low drain-source ON resistance: RDS (ON) = 0.8 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: ...
Toshiba Semiconductor
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