STM8500

S T M8500 S amHop Microelectronics C orp. Arp,20 2005 ver1.2 Dual E nhancement Mode Field E ffect Transistor ( N and P Channel) P R ODUC T S UMMAR Y (N-C hannel) V DS S 55V P R ODUC T S UMMAR Y (P -C hannel) V DS S -55V ID 4.5A R DS (ON) ( m W ) Max ID -3A R DS (ON) ( m W ) Max 50 @ V G S = 10V 75 @ V G S = 4.5V D1 8 110 @ V G S = -10V 145 @ V G S = -4.5V D1 7 D2 6 D2 5 S O-8 1 1 2 3 4 S1 G1 S 2 G2 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage R ating Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed b a S ymbol Vspike V DS V GS 25 C 70 C ID IDM IS PD T J , T S TG d N-C hannel P-C hannel 60 55 20 4.5 3.8 20 1.7 2 1.44 -55 to 150 -60 -55 20 -3 -2.5 -15 -1.7 Unit V V V A A A A W C Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Ta= 25 C Ta=70 C Operating Junction and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 1 62.5 C /W S T M8500 N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg c Condition V GS = 0V, ID = 250uA V DS = 44V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 4.5A V GS =4.5V, ID= 4A V DS = 5V, V GS = 10V V DS = 5V, ID = 4.5A Min Typ C Max Unit 55 1 V uA 100 nA 1.4 2 35 60 15 9 900 80 60 2 15 5 27 10 19 9.5 4 3.6 45 11 60 23 25 13 6...