P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP30P10GP/S-HF-3
P-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Low...
Description
Advanced Power Electronics Corp.
AP30P10GP/S-HF-3
P-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Low Gate Charge Fast Switching Performance RoHS-compliant, halogen-free
D
BV DSS RDS(ON)
G S
-100V 80mΩ -25A
ID
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP30P10GS-HF-3 is in the TO-263 package, which is widely used for commercial and industrial surface-mount applications, and is well suited for low voltage applications such as DC/DC converters. The AP30P10GP-HF-3 is in the TO-220 through-hole package which is used where a low PCB footprint or an attached heatsink is required.
G G D S
TO-263 (S)
Absolute Maximum Ratings
Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1
D
TO-220 (P)
S
Rating -100 ±20 -25 -15 -80 89 -55 to 150 -55 to 150
Units V V A A A W °C °C
Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 1.4 62 Units °C/W °C/W
Ordering Information
AP30P10GS-HF-3TR AP30P10GP-HF-3TB RoHS-compliant, halogen-free TO-263, shipped on tape and reel (800 pcs/reel) RoHS-compliant, halogen-free TO-220, shipped in tubes
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