P-Channel Enhancement Mode MOSFET
I S 3403 ST
AUG .16.2005
P -C hannel E nhancement Mode MOS FE T
P R ODUC T S UMMAR Y
V DS S ID
-3A
F E AT UR E S
( m W...
Description
I S 3403 ST
AUG .16.2005
P -C hannel E nhancement Mode MOS FE T
P R ODUC T S UMMAR Y
V DS S ID
-3A
F E AT UR E S
( m W ) Max
R DS (ON)
S uper high dense cell design for low R DS (ON ).
65 @ V G S = -10V 80 @ V G S = -4.5V
R ugged and reliable. S OT-23 P ackage.
D
-30V
S OT-23
D S G
G
S
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ T J =25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit - 30 20 -3 - 10 -1.25 1.25 -55 to 150 Unit V V A A A W C
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient a R JA 100 C /W
1
I S 3403 ST
E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted)
Parameter
5
S ymbol
BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS
c
Condition
V GS = 0V, ID = -250uA V DS = -24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = -250uA V GS = -10V, ID =-3A V GS = -4.5V, ID = -1A V DS = -5V, V GS = -10V V DS = -5V, ID = - 3A
Min Typ C Max Unit
-30 -1 100 -1 -1.5 -3
44
60
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage V uA nA V
ON CHAR ACTE R IS TICS b
Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 65 m-ohm 80 m-ohm A 7 870 290 180 V DD = -10V, ID = -1A, V GE N = -...
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