STS2307A

S amHop Microelectronics C orp. S T S 2307A Dec 25 2004 P -C hannel E nhancement Mode Field E ffect Trans is tor P R ODUC T S UMMAR Y V DS S -20V F E AT UR E S ( m W ) Max ID -2.8A R DS (ON) S uper high dense cell design for low R DS (ON ). 90 @ V G S = -4.5V 150 @ V G S = -2.5V R ugged and reliable. S OT-23 package. D S OT-23 D S G G S AB S OL UTE MAXIMUM R ATINGS (T A =25 C unles s otherwis e noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit -20 12 -2.8 -11 -1.25 1.25 -55 to 150 Unit V V A A A W C THE R MAL CHAR ACTE R IS TICS Thermal R esistance, Junction-to-Ambient a R thJA 100 C /W 1 S T S 2307A E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = -250uA V DS = -16V, V GS = 0V V GS = 12V, V DS =0V V DS = V GS , ID =-250uA V GS = -4.5V, ID = -2.5A V GS = -2.5V, ID = -1.0A V DS = -5V, V GS = -4.5V V DS = -5V, ID = -2.5A Min Typ C Max Unit -20 1 100 -0.5 -0.8 -1.5 75 -7 6 380 100 60 90 125 150 V uA nA V m-ohm m-ohm ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esista...