P-Channel Enhancement Mode Field Effect Transistor
Description
S amHop Microelectronics C orp.
S T S 2301
J UL.30 2004 ver1.1
P -C hannel E nhancement Mode Field E ffect Trans is tor
P R ODUC T S UMMAR Y
V DS S
-20V
F E AT UR E S
( m W ) Max
ID
-3.4A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
60 @ V G S = -4.5V 80 @ V G S = -2.5V 105 @ V G S = -1.8V
R ugged and reliable. S OT-23 package.
D
S OT...
