SSM6N24TU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
SSM6N24TU
High Speed Switching Applications
Unit: mm Optimum for high-density mounting in small packages Low on-resistance: Ron = 145mΩ (max) (@VGS = 4.5 V) Ron = 180mΩ (max) (@VGS = 2.5 V)
0.65 0.65 2.0±0.1 1.3±0.1 2.1±0.1 1.7±0.1 +0.1 0.3-0.05
Absolute Maximum Ratings (Ta...
