S T M4973
S amHop Microelectronics C orp. S E P .8 2004
Dual P -C hannel E nhancement Mode Field E ffect Transistor
P R...
S T M4973
S amHop Microelectronics C orp. S E P .8 2004
Dual P -C hannel E nhancement Mode Field E ffect
Transistor
P R ODUC T S UMMAR Y
V DS S
-30V
F E AT UR E S
( m W ) Max
ID
-6A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
35 @ V G S = -10V 50 @ V G S = -4.5V
R ugged and reliable. S urface Mount P ackage.
D1
8
D1
7
D2
6
D2
5
S O-8 1
1 2 3 4
S1
G1
S2
G2
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit -30 20 -6 -30 -1.7 2 -55 to 150 Unit V V A A A W C
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient a R JA 62.5 C /W
1
S T M4973
E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted)
Parameter OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS
c
S ymbol
Condition
V GS = 0V, ID = -250uA V DS = -24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = -250uA V GS =-10V, ID = -6A V GS = -4.5V, ID = -5A V DS = -5V, V GS = -10V V DS = -15V, ID = - 5A
Min Typ C Max Unit
-30 -1 V uA 100 nA -1 -1.7 -2.5 27 38 -20 11 1130 210 130 35 50 V
m-ohm m-ohm
ON CHAR ACTE R IS TICS b
Gate Threshold Voltage Drain-S ...