N-Channel Enhancement Mode Field Effect Transistor
Description
S T M7821
S amHop Microelectronics C orp. Arp,20 2005 ver1.1
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
25V
F E AT UR E S
( m W ) Max
ID
10A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
9.5 @ V G S = 10V 20 @ V G S = 4.5V
R ugged and reliable. S urface Mount P ackage.
S O-8 1
ABS OLUTE MAXIMUM R ...
