SSM4957GM

SSM4957(G)M DUAL P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement Lower gate charge Fast switching characteristics D1 D2 D1 D2 BV DSS R DS(ON) ID G2 S2 -30V 24mΩ -7.7A SO-8 G1 S1 Description Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SSM4957M is in the SO-8 package, which is widely preferred for commercial and industrial surface mount applications, and is well suited for low-voltage applications. G1 D1 D2 G2 S1 S2 This device is available with Pb-free lead finish (second-level interconnect) as SSM4957GM. Absolute Maximum Ratings Symbol VDS VGS ID @ TA=25°C ID @ TA=100°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -30 ± 20 -7.7 -6.1 -30 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit °C/W 10/21/2004 Rev.1.01 www.SiliconStandard.com 1 of 5 SSM4957(G)M Electrical Characteristics @ T j=25oC (unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA 2 Min. -30 -1 - Typ. -0.02 12 27 5 18 14 11 38 25 530 435 Max. Units 2...