SSM4924GM

SSM4924GM Dual N-channel Enhancement-mode Power MOSFETs Simple drive requirement Lower gate charge Fast switching characteristics Pb-free; RoHS compliant. D1 D1 BV D2 D2 BVDSS R G2 S2 20V 35mΩ 6A R DS(ON) ID I SO-8 S1 G1 DESCRIPTION Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SSM4924GM is in an SO-8 package, which is widely preferred for commercial and industrial surface mount applications. This device is suitable for low voltage applications such as DC/DC converters. D1 D2 G1 S1 G2 S2 ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID@TA=25°C ID@TA=70°C IDM PD@TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1,4 3 3 Rating 20 ±8 6 4.8 35 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range THERMAL DATA Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient Max. Value 62.5 Unit °C/W 12/10/2004 Rev.2.01 www.SiliconStandard.com 1 of 6 SSM4924GM o ELECTRICAL CHARACTERISTICS @ Tj = 25 C (unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. Typ. Max. Units 20 0.5 0.037 35 50 1.2 1 25 - V V/°C mΩ mΩ V S uA uA nC nC nC ns ns ns ns pF pF pF ∆ BV DSS/∆ Tj RDS...