N-Channel MOSFET
SSM4920M
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple Drive Requirement Low On-resistance Fast Switching
D1 G2 S2 D2 D...
Description
SSM4920M
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple Drive Requirement Low On-resistance Fast Switching
D1 G2 S2 D2 D1
D2
BV DSS R DS(ON) ID
25V 25mΩ 7A
SO-8
S1
G1
Description
D1 D2
Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The SO-8 package is widely preferred for all commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
G1 S1
G2 S2
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1,4 3 3
Rating 25 ± 20 7 5.7 20 2 0.016 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient Max. Value 62.5 Unit ℃/W
Rev.2.01 6/26/2003
www.SiliconStandard.com
1 of 6
SSM4920M
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
Min. Typ. Max. Units 25 1 0.037
25 35 3 1 25 -
V V/℃ mΩ mΩ V S uA uA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V,...
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