SSM4424GM

SSM4424GM N-channel Enhancement-mode Power MOSFET D Simple drive requirement Lower gate charge Fast switching characteristics Pb-free, RoHS compliant. BVDSS R DS(ON) G S 30V 9mΩ 13.8A ID DESCRIPTION D Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SSM4424GM is in the SO-8 package, which is widely preferred for commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters. D D D G SO-8 S S S ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 ± 20 13.8 11 50 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range THERMAL DATA Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 50 Unit °C/W 5/25/2005 Rev.2.10 www.SiliconStandard.com 1 of 5 SSM4424GM Electrical Characteristics @ Tj=25oC(unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 Typ. 0.02 21 23 6 15 13 9 35 17 410 300 0.9 Max. Units 9 14 3 1 25 ±100 35 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω ∆ BV DSS/∆ Tj ...