Document
SSM5N16FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM5N16FU
High Speed Switching Applications Analog Switching Applications
Unit: mm
• Suitable for high-density mounting due to compact package • Low on resistance: Ron = 3.0 Ω (max) (@VGS = 4 V)
: Ron = 4.0 Ω (max) (@VGS = 2.5 V) : Ron = 15 Ω (max) (@VGS = 1.5 V)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
20
V
Gate-Source voltage
VGSS
±10
V
Drain current
DC Pulse
ID
100
mA
IDP
200
Drain power dissipation (Ta = 25°C)
PD(Note 1)
200
mW
JEDEC
―
Channel temperature Storage temperature range
Tch
150
°C
Tstg
−55 to 150
°C
JEITA TOSHIBA
― 2-2L1B
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Total rating
Marking
Equivalent Circuit
5
4
5
4
DS
Q1
Q2
1
2
3
1
2
3
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.
Start of commercial production
2001-03
1
2014-03-01
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)
Characteristics
Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance
Drain-Source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time Turn-off time
Symbol
Test Condition
IGSS V (BR) DSS
IDSS Vth ⏐Yfs⏐
RDS (ON)
Ciss Crss Coss ton toff
VGS = ±10 V, VDS = 0 ID = 0.1 mA, VGS = 0 VDS = 20 V, VGS = 0 VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 10 mA ID = 10 mA, VGS = 4 V ID = 10 mA, VGS = 2.5 V ID = 1 mA, VGS = 1.5 V VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDD = 3 V, ID = 10 mA, VGS = 0 to 2.5 V
Switching Time Test Circuit
SSM5N16FU
Min Typ. Max Unit
⎯
⎯
±1
μA
20
⎯
⎯
V
⎯
⎯
1
μA
0.6
⎯
1.1
V
40
⎯
⎯
mS
⎯
1.5
3.0
⎯
2.2 4.0
Ω
⎯
5.2
15
⎯
9.3
⎯
pF
⎯
4.5
⎯
pF
⎯
9.8
⎯
pF
⎯
70
⎯
ns
⎯ 125 ⎯
(a) Test circuit
2.5 V IN
0
10 μs
VDD = 3 V Duty ≤ 1% VIN: tr, tf < 5 ns (Zout = 50 Ω) Common Source Ta = 25°C
50 Ω
OUT
RL VDD
(b) VIN
2.5 V
(c) VOUT
0V VDD
VDS (ON)
10%
90%
10%
90%
tr
tf
ton
toff
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 μA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) )
Please take this into consideration for using the device.
2
2014-03-01
(Q1, Q2 common)
250
200 10
150
2.5 4 3 2.3
ID – VDS
2.1
Common source Ta = 25°C
1.9
Drain current ID (mA)
1.7 100
1.5 50
VGS = 1.3 V
0
0
0.5
1
1.5
2
Drain-Source voltage VDS (V)
Drain current ID (mA)
SSM5N16FU
1000 100
Common source VDS = 3 V
ID – VGS
Ta = 100°C 10
25°C 1
−25°C
0.1
0.01
0
1
2
3
Gate-Source voltage VGS (V)
Drain-Source on resistance RDS (ON) (Ω)
RDS (ON) – ID
12 Common source
Ta = 25°C 10
8 VGS = 1.5 V
6
4
2.5 V 2
4V
0
1
10
100
1000
Drain current ID (mA)
Drain-Source on resistance RDS (ON) (Ω)
RDS (ON) – VGS
6 Common source
ID = 10 mA 5
4
3
Ta = 100°C 2
25°C
1 −25°C
0
0
2
4
6
8
10
Gate-Source voltage VGS (V)
Drain-Source on resistance RDS (ON) (Ω)
RDS (ON) – Ta
8 Common source
6 VGS = 1.5 V, ID = 1 mA
4
2.5 V, 10 mA
2 4 V, 10 mA
0
−25
0
25
50
75 100 125 150
Ambient temperature Ta (°C)
Gate threshold voltage Vth (V)
Vth – Ta
2 Common source
ID = 0.1 mA VDS = 3 V 1.6
1.2
0.8
0.4
0
−25
0
25
50
75 100 125 150
Ambient temperature Ta (°C)
3
2014-03-01
(Q1, Q2 common)
500 300 Common source
VDS = 3 V Ta = 25°C 100
50
30
⎪Yfs⎪ – ID
Forward transfer admittance ⎪Yfs⎪ (mS)
10
5 3
1
1
10
100
1000
Drain current ID (mA)
Drain reverse current IDR (mA)
SSM5N16FU
IDR – VDS
250 Common source
VGS = 0 V 200 Ta = 25°C
D
150 G
100
IDR S
50
0 0 −0.2 −0.4 −0.6 −0.8 −1 −1.2 −1.4
Drain-Source voltage VDS (V)
Capacitance C (pF)
C – VDS
100.