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SSM5N16FU Dataheets PDF



Part Number SSM5N16FU
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Datasheet SSM5N16FU DatasheetSSM5N16FU Datasheet (PDF)

SSM5N16FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM5N16FU High Speed Switching Applications Analog Switching Applications Unit: mm • Suitable for high-density mounting due to compact package • Low on resistance: Ron = 3.0 Ω (max) (@VGS = 4 V) : Ron = 4.0 Ω (max) (@VGS = 2.5 V) : Ron = 15 Ω (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage VDS 20 V Gate-Source voltage VGSS ±10 V D.

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SSM5N16FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM5N16FU High Speed Switching Applications Analog Switching Applications Unit: mm • Suitable for high-density mounting due to compact package • Low on resistance: Ron = 3.0 Ω (max) (@VGS = 4 V) : Ron = 4.0 Ω (max) (@VGS = 2.5 V) : Ron = 15 Ω (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage VDS 20 V Gate-Source voltage VGSS ±10 V Drain current DC Pulse ID 100 mA IDP 200 Drain power dissipation (Ta = 25°C) PD(Note 1) 200 mW JEDEC ― Channel temperature Storage temperature range Tch 150 °C Tstg −55 to 150 °C JEITA TOSHIBA ― 2-2L1B Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Marking Equivalent Circuit 5 4 5 4 DS Q1 Q2 1 2 3 1 2 3 Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. Start of commercial production 2001-03 1 2014-03-01 Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristics Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol Test Condition IGSS V (BR) DSS IDSS Vth ⏐Yfs⏐ RDS (ON) Ciss Crss Coss ton toff VGS = ±10 V, VDS = 0 ID = 0.1 mA, VGS = 0 VDS = 20 V, VGS = 0 VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 10 mA ID = 10 mA, VGS = 4 V ID = 10 mA, VGS = 2.5 V ID = 1 mA, VGS = 1.5 V VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDD = 3 V, ID = 10 mA, VGS = 0 to 2.5 V Switching Time Test Circuit SSM5N16FU Min Typ. Max Unit ⎯ ⎯ ±1 μA 20 ⎯ ⎯ V ⎯ ⎯ 1 μA 0.6 ⎯ 1.1 V 40 ⎯ ⎯ mS ⎯ 1.5 3.0 ⎯ 2.2 4.0 Ω ⎯ 5.2 15 ⎯ 9.3 ⎯ pF ⎯ 4.5 ⎯ pF ⎯ 9.8 ⎯ pF ⎯ 70 ⎯ ns ⎯ 125 ⎯ (a) Test circuit 2.5 V IN 0 10 μs VDD = 3 V Duty ≤ 1% VIN: tr, tf < 5 ns (Zout = 50 Ω) Common Source Ta = 25°C 50 Ω OUT RL VDD (b) VIN 2.5 V (c) VOUT 0V VDD VDS (ON) 10% 90% 10% 90% tr tf ton toff Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 μA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device. 2 2014-03-01 (Q1, Q2 common) 250 200 10 150 2.5 4 3 2.3 ID – VDS 2.1 Common source Ta = 25°C 1.9 Drain current ID (mA) 1.7 100 1.5 50 VGS = 1.3 V 0 0 0.5 1 1.5 2 Drain-Source voltage VDS (V) Drain current ID (mA) SSM5N16FU 1000 100 Common source VDS = 3 V ID – VGS Ta = 100°C 10 25°C 1 −25°C 0.1 0.01 0 1 2 3 Gate-Source voltage VGS (V) Drain-Source on resistance RDS (ON) (Ω) RDS (ON) – ID 12 Common source Ta = 25°C 10 8 VGS = 1.5 V 6 4 2.5 V 2 4V 0 1 10 100 1000 Drain current ID (mA) Drain-Source on resistance RDS (ON) (Ω) RDS (ON) – VGS 6 Common source ID = 10 mA 5 4 3 Ta = 100°C 2 25°C 1 −25°C 0 0 2 4 6 8 10 Gate-Source voltage VGS (V) Drain-Source on resistance RDS (ON) (Ω) RDS (ON) – Ta 8 Common source 6 VGS = 1.5 V, ID = 1 mA 4 2.5 V, 10 mA 2 4 V, 10 mA 0 −25 0 25 50 75 100 125 150 Ambient temperature Ta (°C) Gate threshold voltage Vth (V) Vth – Ta 2 Common source ID = 0.1 mA VDS = 3 V 1.6 1.2 0.8 0.4 0 −25 0 25 50 75 100 125 150 Ambient temperature Ta (°C) 3 2014-03-01 (Q1, Q2 common) 500 300 Common source VDS = 3 V Ta = 25°C 100 50 30 ⎪Yfs⎪ – ID Forward transfer admittance ⎪Yfs⎪ (mS) 10 5 3 1 1 10 100 1000 Drain current ID (mA) Drain reverse current IDR (mA) SSM5N16FU IDR – VDS 250 Common source VGS = 0 V 200 Ta = 25°C D 150 G 100 IDR S 50 0 0 −0.2 −0.4 −0.6 −0.8 −1 −1.2 −1.4 Drain-Source voltage VDS (V) Capacitance C (pF) C – VDS 100.


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