SSM5N16FE

SSM5N16FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM5N16FE High Speed Switching Applications Analog Switching Applications Unit: mm Suitable for high-density mounting due to compact package Low on resistance: Ron = 3.0 Ω (max) (@VGS = 4 V) : Ron = 4.0 Ω (max) (@VGS = 2.5 V) : Ron = 15 Ω (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage Gate-Source voltage Drain current DC Pulse Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range VDS 20 V VGSS ±10 V ID 100 mA IDP 200 PD(Note 1) 150 mW Tch 150 °C Tstg −55 to 150 °C Note: Note 1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEDEC ― temperature, etc.) may cause this product to decrease in the JEITA ― reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the TOSHIBA 2-2P1B absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Total rating, mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.135 mm2 × 5) 0.3 mm 0.45 mm Marking 5 4 Equivalent Circuit 5 4 DS Q1 Q2 ...